发明名称 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
摘要 An organic light emitting diode display device, and method of fabricating an organic light emitting diode display device are discussed. The organic light emitting diode display device according to one embodiment includes a first electrode on a thin film transistor and connected to a drain electrode; an auxiliary electrode on a same layer as the first electrode; a bank layer covering edges of the first electrode and edges of the auxiliary electrode and having a transmissive hole corresponding and an auxiliary contact hole; a light emitting layer on the first electrode in the transmissive hole; a residual layer on the auxiliary electrode in the auxiliary contact hole. A central portion of the residual layer has a larger thickness than an edge portion of the residual layer. The organic light emitting diode display device further includes a second electrode on the light emitting layer and the residual layer.
申请公布号 US2016093680(A1) 申请公布日期 2016.03.31
申请号 US201514795070 申请日期 2015.07.09
申请人 LG DISPLAY CO., LTD. 发明人 PAEK Seung-Han;BAE Hyo-Dae;OH Young-Mu;LEE Jeong-Won;SONG Heon-Il;YEO Jong-Hoon
分类号 H01L27/32;H01L51/56;H01L51/00;H01L51/52 主分类号 H01L27/32
代理机构 代理人
主权项 1. An organic light emitting diode display device comprising: a substrate; a thin film transistor on the substrate; a first electrode on the thin film transistor and connected to a drain electrode of the thin film transistor; an auxiliary electrode on a same layer as the first electrode; a bank layer covering edges of the first electrode and edges of the auxiliary electrode and having a transmissive hole corresponding to the first electrode and an auxiliary contact hole corresponding to the auxiliary electrode; a light emitting layer on the first electrode in the transmissive hole; a residual layer on the auxiliary electrode in the auxiliary contact hole, wherein a thickness of a central portion of the residual layer is smaller than a thickness of an edge portion of the residual layer; and a second electrode on the light emitting layer and the residual layer.
地址 Seoul KR