COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.

主权项

1. A complementary metal oxide semiconductor (CMOS) device, comprising:
a PMOS with a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer; and an NMOS with an N type metal gate, which comprises the NWFT layer, the NWFM layer and the metal layer, wherein the P type metal gate and the N type metal gate further comprise a top barrier layer disposed between the NWFM layer and the metal layer.