发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a semiconductor chip mounted on some of the plurality of metal patterns. Also, a plurality of hollow portions are formed in peripheral portions of the plurality of metal patterns. In addition, the plurality of hollow portions are not formed in a region overlapping the semiconductor chip in the plurality of metal patterns. Furthermore, the plurality of hollow portions are provided in a plurality of metal patterns arranged at a position closest to the peripheral portion of the top surface of the ceramic substrate among the plurality of metal patterns.
申请公布号 US2016093594(A1) 申请公布日期 2016.03.31
申请号 US201514863894 申请日期 2015.09.24
申请人 Renesas Electronics Corporation 发明人 FUNATSU Katsuhiko;SATO Yukihiro;KANAZAWA Takamitsu;KOIDO Masahiro;TAYA Hiroyoshi
分类号 H01L25/07;H01L23/00;H01L23/498 主分类号 H01L25/07
代理机构 代理人
主权项 1. A semiconductor device comprising: a ceramic substrate having a first surface, and a second surface located on an opposite side of the first surface; a plurality of metal patterns each having a third surface facing and contacting the first surface of the ceramic substrate, and a fourth surface located on an opposite side of the third surface; and a plurality of semiconductor chips mounted on one or some of the plurality of metal patterns, wherein the plurality of metal patterns include: a first metal pattern which has a first side and on which a first semiconductor chip among the plurality of semiconductor chips is mounted; anda second metal pattern which has a second side facing the first side of the first metal pattern and which is separated from the first metal pattern, a first electrode of the first semiconductor chip and the second metal pattern are electrically connected to each other through a first conductive member extending so as to intersect with the first side and the second side, a plurality of hollow portions which are recessed in a direction from the fourth surface to the third surface are formed in peripheral portions of the fourth surfaces of the plurality of metal patterns, and the plurality of hollow portions are not provided in a region overlapping the plurality of semiconductor chips and a region between the first semiconductor chip and the first side of the first metal pattern, and is provided in a third metal pattern arranged at a position closest to a peripheral portion of the first surface of the ceramic substrate among the plurality of metal patterns.
地址 Tokyo JP