发明名称 |
INTEGRATED FAN-OUT PACKAGE WITH DUMMY VIAS |
摘要 |
Disclosed herein is a device comprising a first redistribution layer (RDL) having first lands disposed on a bottom surface of the first RDL and active contact pads disposed on a top surface of the first RDL. The first RDL electrically connects the first lands to the active contact pads. A molding compound layer is disposed on the top surface of the first RDL. Active vias extend through the molding compound layer and are in electrical contact with the active contact pads. Dummy vias extending through the molding compound layer. Top surfaces of the active vias and top surfaces of the dummy vias are substantially planar with a top surface of the molding compound layer, and the dummy vias are electrically insulated from the active vias and the first lands. |
申请公布号 |
US2016093572(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201414500599 |
申请日期 |
2014.09.29 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Hsien-Wei |
分类号 |
H01L23/538;H01L21/48;H01L21/56 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a first redistribution layer (RDL) having first lands disposed on a bottom surface of the first RDL and electrically coupled to active contact pads disposed on a top surface of the first RDL; a molding compound layer disposed on the top surface of the first RDL; active vias extending through the molding compound layer and in electrical contact with the active contact pads; dummy vias extending through the molding compound layer; and a second RDL disposed on a top surface of the molding compound layer; wherein top surfaces of the active vias and top surfaces of the dummy vias are substantially planar with a top surface of the molding compound layer; and wherein the dummy vias are electrically insulated from the active vias and the first lands. |
地址 |
Hsin-Chu TW |