Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area

摘要

A semiconductor device is manufactured at least partially in a semiconductor substrate. The substrate has first and second opposing main surfaces. The method includes forming a cell field portion and a contact area, the contact area being electrically coupled to the cell field portion, and forming the cell field portion by at least forming a transistor. The method further includes insulating a part of the semiconductor substrate from other substrate portions to form a connection substrate portion, forming an electrode adjacent to the second main surface so as to be in contact with the connection substrate portion, forming an insulating layer over the first main surface, forming a metal layer over the insulating layer, forming a trench in the first main surface, and filling the trench with a conductive material, and electrically coupling the connection substrate portion to the metal layer via the trench.

主权项

1. A method of manufacturing a semiconductor device at least partially in a semiconductor substrate, the semiconductor substrate comprising a first and a second main surface, the first and the second main surfaces being opposed to each other, the method comprising forming a cell field portion and a contact area, the contact area being electrically coupled to the cell field portion, and forming the cell field portion by at least forming a transistor, the method further comprising:
insulating a part of the semiconductor substrate from other substrate portions to form a connection substrate portion; forming an electrode adjacent to the second main surface so as to be in contact with the connection substrate portion; forming an insulating layer over the first main surface; forming a metal layer over the insulating layer; forming a trench in the first main surface, and filling the trench with a conductive material; and electrically coupling the connection substrate portion to the metal layer via the trench.