SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

In a substrate processing apparatus, chemical-solution processing is performed by supplying a chemical solution to the upper surface of a substrate in a state where a top plate is located at a first relative position. Also, cleaning processing is performed by supplying a cleaning liquid to the upper surface of the substrate in a state where the top plate is located at a second relative position closer to the substrate than the first relative position is. Moreover, dry processing is performed on the substrate by rotating the substrate in a state where the top plate is located at a third relative position closer to the substrate than the second relative position is. This allows a chemical atmosphere above the substrate to be efficiently removed during the cleaning processing. Consequently, the occurrence of particles due to the chemical atmosphere above the substrate can be suppressed during the dry processing.

主权项

1. A substrate processing apparatus for processing a substrate, comprising:
a substrate holding part for holding a substrate in a horizontal state; a substrate rotation mechanism for rotating said substrate along with said substrate holding part about a central axis pointing in an up-down direction; a chemical-solution supply part for supplying a chemical solution to an upper surface of said substrate; a cleaning-liquid supply part for supplying a cleaning liquid to said upper surface of said substrate; a shielding plate that opposes said upper surface of said substrate; a shielding-plate movement mechanism for moving said shielding plate relative to said substrate in said up-down direction; and a control part for controlling said shielding-plate movement mechanism, said chemical-solution supply part, said cleaning-liquid supply part, and said substrate rotation mechanism to perform chemical-solution processing by supplying said chemical solution to said upper surface of said substrate in a state where said shielding plate is located at a first relative position relative to said substrate in said up-down direction, to perform cleaning processing by supplying said cleaning liquid to said upper surface of said substrate in a state where said shielding plate is located at a second relative position that is closer to said substrate than said first relative position is, and to perform dry processing by rotating said substrate in a state where said shielding plate is located at a third relative position that is closer to said substrate than said second relative position is.