| 发明名称 |
Method for Hydrophobization of Surface of Silicon-Containing Film by ALD |
| 摘要 |
A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon. |
| 申请公布号 |
US2016093485(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201414498036 |
申请日期 |
2014.09.26 |
| 申请人 |
ASM IP Holding B.V. |
发明人 |
Kobayashi Akiko;Nakano Akinori;Ishikawa Dai;Matsushita Kiyohiro |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), said surface being subjected to atmospheric exposure, said method comprising:
providing a substrate with a silicon-containing film formed thereon; and forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas, said treating gas being capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon. |
| 地址 |
Almere NL |
