| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of suppressing a decrease in a maximum oscillation frequency caused by increase of drain conductance, and a method for manufacturing the same.SOLUTION: The compound semiconductor device comprises; a buffer layer 102; a carrier supply layer 103 on a surface of the buffer layer 102; a channel layer 104 on the carrier supply layer 103; a barrier layer 105 on the channel layer 104, forming type II of hetero junction with the channel layer 104; a source electrode 111 and a drain electrode 112 above the channel layer 104; and a gate electrode 113 above the barrier layer 105.SELECTED DRAWING: Figure 1 |
