| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a first metal containing a first conductivity-type impurity above a substrate provided with a first conductivity-type impurity region containing a first conductivity-type impurity and a second conductivity-type impurity region containing a second conductivity-type impurity; and forming a metal silicide containing the first metal by selectively causing, by thermal treatment, a reaction between the first metal and silicon contained in the substrate in the first conductivity-type impurity region. |
| 申请公布号 |
US2016093538(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514638443 |
申请日期 |
2015.03.04 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WAKATSUKI SATOSHI;KITAMURA MASAYUKI;SAKATA ATSUKO;SUGURO KYOICHI |
| 分类号 |
H01L21/8238;H01L29/167;H01L29/45;H01L21/288;H01L21/285 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming a first metal containing a first conductivity-type impurity above a substrate provided with a first conductivity-type impurity region containing a first conductivity-type impurity and a second conductivity-type impurity region containing a second conductivity-type impurity; and forming a metal silicide containing the first metal by selectively causing, by thermal treatment, a reaction between the first metal and silicon contained in the substrate in the first conductivity-type impurity region. |
| 地址 |
Tokyo JP |
