发明名称 SUBSTRATE LIQUID PROCESSING METHOD, SUBSTRATE LIQUID PROCESSING APPARATUS, AND RECORDING MEDIUM
摘要 Disclosed is a substrate liquid processing method. The method includes: supplying a first processing liquid to a central portion of a substrate at a first flow rate by a first nozzle while rotating the substrate using a substrate holding unit; supplying a second processing liquid to a location between the central portion and an outer circumferential end of the substrate by a second nozzle while supplying the first processing liquid to the central portion of the substrate at the first flow rate; and changing the flow rate of the first processing liquid supplied from the first nozzle to a second flow rate lower than the first flow rate, so as to continue forming of the liquid film on the overall surface of the substrate while supplying the second processing liquid by the second nozzle to the substrate that is formed with a liquid film on the overall surface thereof.
申请公布号 US2016093517(A1) 申请公布日期 2016.03.31
申请号 US201514851388 申请日期 2015.09.11
申请人 Tokyo Electron Limited 发明人 Higashi Hiroyuki;Goshi Gentaro;Otsuka Takahisa
分类号 H01L21/67;H01L21/02;B08B3/10 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate liquid processing method comprising: supplying a first processing liquid to a central portion of a substrate at a first flow rate by a first nozzle while rotating the substrate using a substrate holding unit, the substrate holding unit being configured to horizontally hold the substrate and to rotate the substrate around a vertical axis; supplying a second processing liquid to a location between the central portion and an outer circumferential end of the substrate by a second nozzle while supplying the first processing liquid to the central portion of the substrate at the first flow rate; and changing the flow rate of the first processing liquid supplied from the first nozzle to a second flow rate that is lower than the first flow rate, so as to continue forming of the liquid film on the overall surface of the substrate while supplying the second processing liquid by the second nozzle to the substrate that is formed with a liquid film on the overall surface thereof.
地址 Tokyo JP