发明名称 Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method.
摘要 A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate, the method comprising the steps: (a) receiving a substrate comprising first and second structures produced using the lithographic process; (b) detecting scattered radiation while illuminating the first structure with radiation to obtain a first scatterometer signal; (c) detecting scattered radiation while illuminating the second structure with radiation to obtain a second scatterometer signal; (d) using the first and second scatterometer signals to determine an exposure dose value used to produce said first and second structures wherein the first structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose and the second structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose wherein the exposure dose affects the exposure dose affected spatial characteristics of the first and second structures in a different manner.
申请公布号 NL2014938(A) 申请公布日期 2016.03.31
申请号 NL20152014938 申请日期 2015.06.09
申请人 ASML NETHERLANDS B.V. 发明人 ALOK VERMA;HUGO AUGUSTINUS JOSEPH CRAMER
分类号 G03F7/20;G01N21/47 主分类号 G03F7/20
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