SEMICONDUCTOR DEVICES HAVING SOURCE/DRAIN AND METHOD OF FABRICATING THE SAME

摘要

According to an exemplary embodiment of the present embodiment, a semiconductor device is provided as follows. An active fin protrudes from a substrate, extending in a direction. A gate structure crosses a first region of the active fin. A source/drain is disposed on a second region of the active fin. The source/drain includes upper surfaces and vertical side surfaces. The vertical side surfaces are in substantially parallel with side surfaces of the active fin.

主权项

1. A semiconductor device, comprising:
a substrate; an active fin protruding from the substrate and extending in a direction; a gate structure crossing a first region of the active fin; and a source/drain disposed on a second region of the active fin, wherein the source/drain comprises upper surfaces and vertical side surfaces, wherein the vertical side surfaces are in substantially parallel with side surfaces of the active fin, wherein an upper surface of the first region of the active fin is coplanar with an upper surface of the second region of the active fin, wherein the source/drain is formed by crystal growth from the side surfaces and the upper surface of the active fin, wherein the substrate is a {100}/<110> substrate, the side surface of the active fin is a {110} surface, and the upper surface of the active fin is a {100} surface, and wherein the side surfaces of the source/drain are {110} surfaces and the upper surfaces of the source/drain are {111} surfaces.