发明名称 IMAGING DEVICE
摘要 An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.
申请公布号 US2016093652(A1) 申请公布日期 2016.03.31
申请号 US201514859530 申请日期 2015.09.21
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 IKEDA Takayuki;KUROKAWA Yoshiyuki
分类号 H01L27/146;H01L31/032;H01L31/0272;H01L29/786;H01L29/24 主分类号 H01L27/146
代理机构 代理人
主权项 1. An imaging device comprising: a first region to an n-th region (n is a natural number of 2 or more and 16 or less); and a first circuit, a second circuit, a third circuit, and a fourth circuit in each of the first region to the n-th region, wherein the first to third circuits each include a transistor in which silicon is used in an active layer or an active region, wherein the fourth circuit includes a transistor in which an oxide semiconductor is used in an active layer and a photoelectric conversion element, wherein the first circuit is configured to read out a signal from the third circuit, wherein the second circuit is configured to output a signal for driving the fourth circuit, wherein the third circuit is configured to process a signal output from the fourth circuit, wherein the fourth circuit is configured to convert light into the signal, wherein the first circuit includes a region overlapping with the fourth circuit, and wherein the third circuit includes a region overlapping with the fourth circuit.
地址 Atsugi-shi JP
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