发明名称 MANUFACTURING METHOD AND MANUFACTURING SYSTEM FOR SILICON SINGLE CRYSTAL
摘要 [Problem] To estimate in advance an initial liquid surface level of a silicon melt in a silica glass crucible by accurately ascertaining the volume of the individual silica glass crucible so as to securely perform a seed-crystal liquid contact step. [Solution] In the present invention, before a silica glass crucible is filled with raw material, the spatial coordinates of numerous points on the inner surface of the silica glass crucible are measured and the three-dimensional shape of the inner surface of the silica glass crucible is identified by combining polygons with the measured points as apex coordinates (S11), an estimated value of the initial liquid surface level of silicon melt in the silica glass crucible is set (S12), a volume of silicon melt that meets the estimated value of the initial liquid surface level is determined on the basis of the three-dimensional shape of the inner surface of the silica glass crucible (S13), the weight of the silicon melt with that volume is determined (S14), raw material with that weight is loaded into the silica glass crucible (S15), and liquid contact with a seed crystal is controlled on the basis of the estimated value of the initial liquid surface level (S17).
申请公布号 WO2016047693(A1) 申请公布日期 2016.03.31
申请号 WO2015JP76950 申请日期 2015.09.24
申请人 SUMCO CORPORATION 发明人 SATO TADAHIRO;KITAHARA ERIKO;SUDO TOSHIAKI;KITAHARA KEN
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
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