| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which reduction in withstanding voltage is suppressed, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises: a semiconductor substrate (12); a first semiconductor region (14) of a first conductivity type formed on a principal surface part of the semiconductor substrate, and that has a shape including an extended part extended in a predetermined direction with a predetermined width when seen from a direction vertical to the principal surface part; a second semiconductor region (16) of the first conductivity type formed on the principal surface part so as to be separated from the first semiconductor region, and that has a shape including a part along the extended part of the first semiconductor region when seen from a direction vertical to the principal surface part; an electric field alleviation layer (26a) formed at the second semiconductor region side of the principal surface part, and that is formed by a semiconductor layer of a second conductivity type, and that alleviates an electric field generated between the first semiconductor region and the second semiconductor region; and a conductor (30) connected with the second semiconductor region, and whose end part (PA) at the first semiconductor region side is located within a range of the electric field alleviation layer.SELECTED DRAWING: Figure 2 |
