| 摘要 |
A TFT device including: a gate electrode; a channel layer above the gate electrode; a channel protection layer on the channel layer; an electrode pair on the channel protection layer composed of a source electrode and a drain electrode that are spaced away from one another, a part of each of the source electrode and the drain electrode in contact with the channel layer through the channel protection layer; and a passivation layer extending over the gate electrode, the channel layer, the electrode pair, and the channel protection layer. The channel layer is made of an oxide semiconductor. The TFT device has a first sub-layer made of one of silicon nitride and silicon oxynitride and in which Si—H density is no greater than 2.3×1021 cm−3. The first sub-layer is included in at least one of the channel protection layer and the passivation layer. |
