EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRUCTURE

摘要

A method for producing a semiconductor structure, as well as a semiconductor structure, that uses a partial removal of an insulating layer around a semiconductor fin, and subsequently epitaxially growing an additional semiconductor material in the exposed regions, while maintaining the shape of the fin with the insulating layer.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming a semiconductor fin on a substrate, wherein the semiconductor fin has a source/drain region and a gate region; forming a gate above the gate region of the semiconductor fin; forming an insulating layer on the substrate, the semiconductor fin and the gate; performing a first etch, wherein the first etch comprises removing the insulating layer from a top surface of the semiconductor fin in the source/drain region while maintaining a portion of the insulating layer on at least one vertical surface of the semiconductor fin in the source/drain region; performing a second etch, wherein the second etch comprises removing at least a portion of the fin in the source/drain region; and epitaxially growing a semiconductor material in the source/drain region of the semiconductor fin removed by the second etch.