发明名称 Air Gap Structure and Method
摘要 A device comprises a first protection layer over sidewalls and a bottom of a first trench in a first dielectric layer, a first barrier layer over the first protection layer, a first metal line in the first trench, a second protection layer over sidewalls and a bottom of a second trench in the first dielectric layer, a second barrier layer over the second protection layer, a second metal line in the first trench, an air gap between the first trench and the second trench and a third protection layer over sidewalls of a third trench in the first dielectric layer, wherein the first protection layer, the second protection layer and the third protection are formed of a same material.
申请公布号 US2016093566(A1) 申请公布日期 2016.03.31
申请号 US201414497052 申请日期 2014.09.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Ting Chih-Yuan;Shieh Jyu-Horng
分类号 H01L23/522;H01L21/311;H01L21/768;H01L23/528;H01L23/532 主分类号 H01L23/522
代理机构 代理人
主权项 1. A device comprising: an air gap between a first metal line and a second metal line in a first dielectric layer, wherein: the first metal line and the first dielectric layer are separated by a first protection layer; andthe second metal line and the first dielectric layer are separated by a second protection layer; and a first metal structure in the first dielectric layer, wherein an upper portion of the first metal structure and the first dielectric layer are separated by a third protection layer, and wherein the first protection layer, the second protection layer and the third protection layer are formed of a same material.
地址 Hsin-Chu TW