发明名称 |
Air Gap Structure and Method |
摘要 |
A device comprises a first protection layer over sidewalls and a bottom of a first trench in a first dielectric layer, a first barrier layer over the first protection layer, a first metal line in the first trench, a second protection layer over sidewalls and a bottom of a second trench in the first dielectric layer, a second barrier layer over the second protection layer, a second metal line in the first trench, an air gap between the first trench and the second trench and a third protection layer over sidewalls of a third trench in the first dielectric layer, wherein the first protection layer, the second protection layer and the third protection are formed of a same material. |
申请公布号 |
US2016093566(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201414497052 |
申请日期 |
2014.09.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Ting Chih-Yuan;Shieh Jyu-Horng |
分类号 |
H01L23/522;H01L21/311;H01L21/768;H01L23/528;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
an air gap between a first metal line and a second metal line in a first dielectric layer, wherein:
the first metal line and the first dielectric layer are separated by a first protection layer; andthe second metal line and the first dielectric layer are separated by a second protection layer; and a first metal structure in the first dielectric layer, wherein an upper portion of the first metal structure and the first dielectric layer are separated by a third protection layer, and wherein the first protection layer, the second protection layer and the third protection layer are formed of a same material. |
地址 |
Hsin-Chu TW |