| 摘要 |
This method for manufacturing a semiconductor device performs: a step for forming an amorphous metal film on a substrate by carrying out, a predetermined number of times in a time division manner, a step wherein a first amorphous metal layer is formed on the substrate by simultaneously supplying a metal-containing gas and a first reducing gas to the substrate and a step wherein a second amorphous metal layer is formed on the first amorphous metal layer by supplying the metal-containing gas and a second reducing gas to the substrate, on which the first amorphous metal layer has been formed, a predetermined number of times in a time division manner; and a step for forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate, on which the amorphous metal film has been formed. |
