SOURCE-CHANNEL INTERACTION IN 3D CIRCUIT

摘要

A multilayer source provides charge carriers to a multitier channel connector. The source includes a metal silicide layer on a substrate and a metal nitride layer between the metal silicide layer and the channel. The metal silicide and the metal nitride are processed without an intervening oxide layer between them. In one embodiment, the source further includes a silicon layer between the metal nitride layer and the channel. The silicon layer can also be processed without an intervening oxide layer. Thus, the source does not have an intervening oxide layer from the substrate to the channel.

主权项

1. A circuit device comprising:
multiple tiers of circuit elements stacked adjacent each other, each tier including a circuit element activated via a gate; a channel extending through the multiple tiers of circuit elements, the channel including doped polycrystalline (poly) material to produce a voltage differential across the gate; and a source electrically coupled to the channel to provide charge carriers to the channel, the source including a metal silicide layer on a substrate, and a metal nitride layer between the metal silicide layer and the channel, wherein the metal nitride is processed onto the metal silicide without an intervening oxide layer.