发明名称 FOCUSED ION BEAM SYSTEMS AND METHODS OF OPERATION
摘要 A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.
申请公布号 US2016093463(A1) 申请公布日期 2016.03.31
申请号 US201414891046 申请日期 2014.03.18
申请人 INDIAN INSTITUTE OF TECHNOLOGY KANPUR 发明人 BHATTACHARJEE Sudeep;MATHEW Jose Vettiyankal
分类号 H01J37/05;H01J37/305;H01J37/08 主分类号 H01J37/05
代理机构 代理人
主权项 1. A focused ion beam (FIB) system comprising: a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma, wherein the plasma generation chamber comprises: a multicusp plasma confinement device having a first set of magnets to confine the plasma in radial and axial directions within the plasma generation chamber and a second set of magnets to facilitate formation of a plasma meniscus at an extraction end of the plasma generation chamber; and a beam extraction chamber comprises: a plasma electrode configured to receive ions from the plasma genera ton chamber;a first Einzel lens configured to extract a focused ion beam from the confined plasma;a beam limiting slit disposed adjacent to the first Einzel lens to reduce a size of the extracted focused ion beam; and second Einzel lens disposed adjacent to the beam limiting slit, configured to focus the extracted focused ion beam on a workpiece, wherein a beam spot formed on the workpiece by the focused ion beam has a diameter of about 10 microns to about 20 microns.
地址 Kanpur, Uttar Pradesh IN