| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device may include a plurality of memory chips stacked upon one another, and electrically coupled to one another through a plurality of first TSVs. The semiconductor memory device may include a plurality of second memory chips stacked separately from the first memory chips, and the plurality of second memory chips electrically coupled to one another through a plurality of second TSVs. The semiconductor memory device may include a plurality of external connection electrodes coupled to both to the first memory chips and the second memory chips. Wherein one of the first and second memory chips may be accessed in response to chip select signals inputted through the external connection electrodes. |
| 申请公布号 |
US2016093378(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514608705 |
申请日期 |
2015.01.29 |
| 申请人 |
SK hynix Inc. |
发明人 |
LYM Sang Kug |
| 分类号 |
G11C14/00;G11C17/16;G11C7/22;G11C5/02;G11C7/10 |
主分类号 |
G11C14/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a plurality of memory chips stacked upon one another, and electrically coupled to one another through a plurality of first TSVs; a plurality of second memory chips stacked separately from the first memory chips, and the plurality of second memory chips electrically coupled to one another through a plurality of second TSVs; and a plurality of external connection electrodes coupled to both the first memory chips and the second memory chips, wherein one of the first and second memory chips is accessed in response to chip select signals inputted through the external connection electrodes. |
| 地址 |
Icheon-si Gyeonggi-do KR |
