| 发明名称 |
HIGH VOLTAGE MULTIPLE CHANNEL LDMOS |
| 摘要 |
An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion. |
| 申请公布号 |
US2016093612(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514965182 |
申请日期 |
2015.12.10 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Zhang Yongxi;Pendharkar Sameer P. |
| 分类号 |
H01L27/088;H01L29/78;H01L29/10;H01L29/66;H01L29/167;H01L21/8238;H01L21/762;H01L21/265;H01L21/324;H01L27/092;H01L29/06 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
an NMOS transistor; a PMOS transistor; an LDMOS transistor with a first LDMOS transistor gate, with an LDMOS source, an LDMOS drain and at least two current channels coupled between the LDMOS source and the LDMOS drain; and wherein the LDMOS transistor gate switches current in the current channels. |
| 地址 |
Dallas TX US |
