发明名称 ETCHING PROCESSES FOR SOLAR CELL FABRICATION
摘要 A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.
申请公布号 WO2016049231(A1) 申请公布日期 2016.03.31
申请号 WO2015US51786 申请日期 2015.09.23
申请人 SUNPOWER CORPORATION 发明人 HARRINGTON, SCOTT;BALU, VENKATASUBRAMANI;WESTERBERG, STAFFAN;COUSINS, PETER JOHN
分类号 H01L31/18;H01L21/306;H01L31/04 主分类号 H01L31/18
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