发明名称 |
ETCHING PROCESSES FOR SOLAR CELL FABRICATION |
摘要 |
A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region. |
申请公布号 |
WO2016049231(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
WO2015US51786 |
申请日期 |
2015.09.23 |
申请人 |
SUNPOWER CORPORATION |
发明人 |
HARRINGTON, SCOTT;BALU, VENKATASUBRAMANI;WESTERBERG, STAFFAN;COUSINS, PETER JOHN |
分类号 |
H01L31/18;H01L21/306;H01L31/04 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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