SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

[Problem] To provide a semiconductor device manufacturing method and a substrate processing apparatus, whereby film thickness within a surface of one substrate, and film thicknesses of a plurality of substrates are made uniform. [Solution] The present invention has: a step for placing a plurality of substrates on a substrate placing table in a treatment chamber; a step for rotating the substrate placing table, and supplying first and second treatment regions in the treatment chamber with a first element containing gas and a second element containing gas, respectively; a step for starting plasma excitation of the second element containing gas; and a step for forming, in the first treatment region, a first element containing layer on each of the substrates, and modifying, in the second treatment region, the first element containing layer into active species or the like containing a second element. In the step for starting the plasma excitation, the plasma excitation is started at timing when the substrates and a supply port of the active species or the like are in a predetermined positional relationship.