| 摘要 |
This silicon carbide semiconductor device is provided with: a first conductivity-type silicon carbide layer 32; a second conductivity-type silicon carbide layer 36; a gate trench 20; a gate electrode 79 that is provided in the gate trench 20; and a protection trench 10 that is formed deeper than the gate trench 20. In the horizontal direction, a region including both the gate trench 20 and the protection trench 10 is set as a cell region, said protection trench surrounding, in the horizontal direction, the gate trench 20 in a state wherein at least a part of the gate trench is open, and in the horizontal direction, a region wherein the protection trench 10 is included, and a gate pad 89 or a routing electrode connected to the gate pad 89 is disposed is set as a gate region. The protection trench 10 included in the cell region has a plurality of cell region linear trenches 11 linearly extending in the horizontal direction. The horizontal direction distance D1 between the cell region linear trenches 11 is longer than the maximum horizontal direction distance D3 between the protection trenches 10 included in the gate region. |
