| 摘要 |
Provided is a semiconductor memory device including variable resistance devices. The semiconductor memory device, as a device separation film defining first and second active patterns placed on a semiconductor substrate in a first direction as separated from each other, and a third active pattern placed in a diagonal direction to the first and second active patterns, wherein the first, second, and third active patterns individually have a major axis in a second direction vertical to the first direction, includes: a first word line extended in the first direction to cross the first and second active patterns; a second word line extended in the first direction to cross the third active pattern; a bit line extended in the second direction, and placed between the first active pattern and the third active pattern from a planar viewpoint; and a source line extended in the second direction, and placed between the second active pattern and the third active pattern from the planar viewpoint. |
