发明名称 METAL HARD MASK AND METHOD FOR PRODUCING SAME
摘要 This metal hard mask (103) for etching an etching object film (102) that is present on an object to be processed is formed of an amorphous alloy film that is formed by a thin film formation technique. It is preferable to use a physical deposition method as the thin film formation technique, and sputtering is suitable for the use among physical deposition methods. This metal hard mask (103) is obtained by forming an amorphous alloy film on the etching object film (102) by a thin film formation technique and patterning the amorphous alloy film.
申请公布号 WO2016047245(A1) 申请公布日期 2016.03.31
申请号 WO2015JP69900 申请日期 2015.07.10
申请人 TOKYO ELECTRON LIMITED 发明人 KIKUCHI YUUKI;NAGAI HIROYUKI;HIROTA YOSHIHIRO;SUZUKI MIKIO
分类号 H01L21/3065;C23C14/14;H01L21/768 主分类号 H01L21/3065
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