| 摘要 |
A reverse conduction insulated gate bipolar transistor, comprising a collector, a P-type collector region (02), an N-type tunnel doped region (03), an N-type blocking layer (04), an N-type drift region (05), a MOS region and a gate. The P-type collector region (02) is a degenerate doped region, where the Fermi level enters the valence band; the N-type tunnel doped region (03) is a region where the doping concentration is close to degenerate doping, and the Fermi level is close to the bottom of the conduction band but does not enter the conduction band; the doping concentration of the P-type collector region (02) is higher than the doping concentration of the N-type tunnel doped region (03). The transistor realizes reverse conduction by introducing the N-type tunnel doped region (03); thus a back surface does not need an etching process during manufacture. During operation, since the N-type region at the collector end of an ordinary reverse conduction IGBT is not present, the problem of current concentration which arises during forward conduction and reverse conduction of a device is non-existent; the phenomenon of voltage rebound during forward conduction of a device is also non-existent. |
