| 发明名称 |
PASSIVATION FOR SEMICONDUCTOR DEVICES |
| 摘要 |
A Schottky diode is disclosed that includes a silicon carbide substrate, a silicon carbide drift layer, a Schottky contact, and a passivation structure. The silicon carbide drift layer provides an active region and an edge termination region about the active region. The Schottky contact has sides and a top extending between the two sides and includes a Schottky layer over the active region and an anode contact over the Schottky layer. The passivation structure covers the edge termination region, the sides of the Schottky contact, and at least a portion of the top of the Schottky contact. The passivation structure includes a first silicon nitride layer, a silicon dioxide layer over the first silicon nitride layer, and a second silicon nitride layer over the silicon dioxide layer. |
| 申请公布号 |
US2016093748(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201414497568 |
申请日期 |
2014.09.26 |
| 申请人 |
Cree, Inc. |
发明人 |
Mieczkowski Van;Young Jonathan;Zhang Qingchun;Palmour John Williams |
| 分类号 |
H01L29/872;H01L29/66;H01L29/16 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Schottky diode comprising:
a silicon carbide substrate; a silicon carbide drift layer over the silicon carbide substrate and providing an active region and an edge termination region about the active region; a Schottky contact having sides and a top extending between the sides and comprising a Schottky layer over the active region and an anode contact over the Schottky layer; and a passivation structure comprising a first silicon nitride layer, a silicon dioxide layer over the first silicon nitride layer, and a second silicon nitride layer over the silicon dioxide layer, wherein the passivation structure covers the edge termination region, the sides of the Schottky contact, and at least a portion of the top of the Schottky contact. |
| 地址 |
Durham NC US |
