ETCHING METHOD FOR FORMING GROOVES IN Si-SUBSTRATE AND FIN FIELD-EFFECT TRANSISTOR

摘要

An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in an inverted -symbol shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

主权项

1. An etching method adapted for forming grooves in Si-substrate, comprising:
providing a silicon substrate, at least two gate structures being formed on the silicon substrate and at least two gate spacer structures being disposed on the silicon substrate; performing a first etching process on the silicon substrate so as to form a first groove, wherein the first groove has a base and two inclined sidewalls, the two inclined sidewalls are ascending to respective bottoms of the gate structures, and interconnected with the base, respectively; performing a second etching process on the silicon substrate at the base of the first groove so as to form a second groove in an inverted -symbol shape, wherein the inclined sidewalls of the first groove are interconnected with the second groove, respectively, and the first etching process is substantially different from the second etching process.