FINFET WITH REDUCED CAPACITANCE

摘要

A structure including a plurality of fins etched from a semiconductor substrate, a gate electrode above and perpendicular to the plurality of fins, a pair of sidewall spacers disposed on opposing sides of the gate electrode, a gap fill material above the semiconductor substrate and between the plurality of fins, the gap fill material is directly below the gate electrode and directly below the pair of sidewall spacers, wherein the gate electrode separates the gap fill material from each of the plurality of fins, and an epitaxially grown region above a portion of the plurality of fins not covered by the gate electrode, the EPI region separates the gap fill material from each of the plurality of fins.

主权项

1. A structure comprising:
a plurality of fins etched from a semiconductor substrate; a gate electrode above and perpendicular to the plurality of fins, a pair of sidewall spacers disposed on opposing sides of the gate electrode; a gap fill material above the semiconductor substrate and between the plurality of fins, the gap fill material is directly below the gate electrode and directly below the pair of sidewall spacers, wherein the gate electrode separates the gap fill material from each of the plurality of fins; and an epitaxially grown region (“EPI region”) above a portion of the plurality of fins not covered by the gate electrode, the EPI region separates the gap fill material from each of the plurality of fins.