发明名称 |
Semiconductor Device and Method for Manufacturing the Same |
摘要 |
A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench. |
申请公布号 |
US2016093712(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201414515514 |
申请日期 |
2014.10.16 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
TSAI SHIH-CHANG;TSENG TZU-CHIN;LIN HSIAO-TING;CHEN CHANG-YIH;LAI SAM |
分类号 |
H01L29/51;H01L29/423;H01L21/02;H01L21/321;H01L21/768;H01L29/49;H01L21/28 |
主分类号 |
H01L29/51 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for manufacturing a semiconductor device, comprising steps of:
providing a substrate with a first dielectric layer thereon, said first dielectric layer having a trench; depositing a metal layer filling said trench and covering a surface of said first dielectric layer; partially removing said metal layer so that a remaining portion of said metal layer covers said first dielectric layer; performing a treatment process to transform a top portion of said remaining portion of said metal layer into a passivation layer; and performing a chemical-mechanical polishing (CMP) process until said first dielectric layer is exposed so that a remaining portion of said passivation layer remains in said trench. |
地址 |
HSINCHU TW |