| 发明名称 |
DOPED ZINC OXIDE AS N+ LAYER FOR SEMICONDUCTOR DEVICES |
| 摘要 |
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type layer is formed on or in the p-doped layer. The n-type layer includes ZnO on the p-doped layer to form an electronic device. |
| 申请公布号 |
US2016093701(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201414501827 |
申请日期 |
2014.09.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DeSouza Joel P.;Fogel Keith E.;Kim Jeehwan;Lee Ko-Tao;Sadana Devendra K. |
| 分类号 |
H01L29/267;H01L29/78;H01L21/465;H01L29/66;H01L21/477;H01L21/02;H01L29/861 |
主分类号 |
H01L29/267 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a p-doped layer including a doped InGaAs material on the substrate; an n-type layer formed on or in the p-doped layer, the n-type layer including ZnO to form an electronic device, wherein the n-type layer includes an interface layer formed from materials of the n-type layer and the p-doped layer. |
| 地址 |
Armonk NY US |
