OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The invention relates to an optoelectronic device (50) including: a semiconductor substrate (14) doped with a first conductivity type; semiconductor contact pads (54) or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (26), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (30), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarising the contact pads (54) or the layer. The contact pads or the layer are selected among: aluminium nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.

主权项

1. An optoelectronic device comprising:
a doped semiconductor substrate of a first conductivity type; pads (54) or a layer, on a surface (16 ) of the substrate, doped with a second conductivity type opposite to the first type; wire-shaped, conical, or tapered semiconductor elements, doped with the first conductivity type, each element resting on one of the pads or on the layer; light-emitting semiconductor portions, each portion at least partially covering one of the semiconductor elements; and a circuit for biasing the pads or the layer, wherein the substrate is made of a semiconductor material selected from the group comprising silicon, germanium, silicon carbide, a III-V compound, a II-VI compound, and a combination of these compounds, and wherein the pads or the layer are made of a material selected from the group comprising aluminum nitride, boron nitride, silicon carbide, magnesium nitride, magnesium gallium nitride, or a combination thereof and of their nitrided compounds.