| 发明名称 |
DOUBLE GATED FLASH MEMORY |
| 摘要 |
A split gate memory cell is fabricated with a fin structure between a memory gate stack and a select gate. Embodiments include a first channel region under the memory gate stack and a second channel region under the select gate. |
| 申请公布号 |
US2016093630(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514964907 |
申请日期 |
2015.12.10 |
| 申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
TAN Shyue Seng (Jason);TOH Eng Huat;QUEK Elgin |
| 分类号 |
H01L27/115;G11C16/26;H01L29/78;H01L29/423;H01L29/788;G11C16/14;G11C16/04 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a fin structure on a substrate; a memory gate stack proximate a first side surface of the fin structure; and a select gate proximate a second side surface of the fin structure. |
| 地址 |
Singapore SG |
