DEPOSITION METHOD AND SPUTTERING DEVICE

摘要

The purpose of the present invention is to prevent deposition of an uneven film at the start or end of film deposition without having to install a movement mechanism for a target. This sputtering device generates inductively coupled plasma (22) by supplying high-frequency power (PR) to an antenna (20) provided in a vacuum vessel (2) into which a gas (10) is introduced, and uses the plasma (22) and a target bias voltage (VT) to sputter a target (30) and deposit a film on a substrate (12). At the start of film deposition, the target bias voltage (VT) is applied to the target (30) to initiate sputtering after the high-frequency power (PR) has been supplied to the antenna (20) and the plasma (22) has been generated, and at the end of film deposition, the target bias voltage (VT) applied to the target (30) is stopped to stop sputtering, after which the high-frequency power (PR) supplied to the antenna (20) is stopped to quench the plasma (22).