| 摘要 |
Provided are a semiconductor thin film of an inorganic metal oxide of a perovskite structure and a metal oxide thin film transistor. The semiconductor thin film of an inorganic metal oxide of a perovskite structure is used as an active layer (a04), with a chemical formula of MxA1-xBO3, wherein 0.001 ≤ x ≤ 0.5, A is at least one of Ca, Sr or Ba, B is one of Ti or Sn, and M is at least one of Sc, Y, rare earth elements, Al or In, and is composed of a plurality of crystal particles of a perovskite structure, where the crystal particles have a size of from 2 nm to 900 nm. The thickness of the semiconductor thin film of an inorganic metal oxide of a perovskite structure is from 10 nm to 500 nm. As an active layer, the semiconductor thin film has a high electron mobility, and the metal oxide thin film transistor thus-prepared has good light stability, a low sub-threshold swing, a simple preparation process and low costs. |
