半導体装置

摘要

PROBLEM TO BE SOLVED: To provide a SGT having a structure for forming a transistor as a result of a difference in work functions of a metal and a semiconductor.SOLUTION: A semiconductor device comprises: a columnar semiconductor having an impurity concentration of 10cmor less; a first insulator surrounding the columnar semiconductor; a first metal surrounding the first insulator at one edge of the columnar semiconductor; a second metal surrounding the first insulator at the other edge of the columnar semiconductor; a third metal in which a region between the first metal and the second metal surrounds the first insulator; a second insulator formed between the first metal and the third metal; a third insulator formed between the second metal and the third metal; a fourth metal connecting the first metal and one edge of the columnar semiconductor; and a fifth metal connecting the second metal and the other edge of the columnar semiconductor. The work function of the third metal is 4.2 eV to 5.0 eV.