| 摘要 |
Depositing polycrystalline silicon, comprises introducing a reaction gas comprising a silicon containing component and hydrogen into a reactor, depositing polycrystalline silicon in the form of rods, introducing a silicon or silicon-containing compounds acting gas into the reactor, circulating silicon or silicon-containing compounds attacking gas around the polycrystalline rods and an inner wall of reactor to assist in the formed deposit, and adhering silicon-containing particles to the inner wall of the reactor or on the polycrystalline silicon rods before removing the rods from the reactor. Deposition of polycrystalline silicon, comprises introducing a reaction gas comprising a silicon containing component and hydrogen into a reactor, depositing polycrystalline silicon in the form of rods, introducing a silicon or silicon-containing compounds acting gas into the reactor, circulating silicon or silicon-containing compounds attacking gas around the polycrystalline rods and an inner wall of reactor to assist in the formed deposit, and adhering silicon-containing particles to the inner wall of the reactor or on the polycrystalline silicon rods before removing the polycrystalline silicon rods from the reactor. |
