发明名称 半導体装置
摘要 A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm&phgr; and less than or equal to 10 nm&phgr;.
申请公布号 JP5894694(B2) 申请公布日期 2016.03.30
申请号 JP20150085640 申请日期 2015.04.20
申请人 株式会社半導体エネルギー研究所 发明人 高橋 正弘;廣橋 拓也;津吹 将志;石原 典隆;太田 将志
分类号 H01L29/786;C23C14/08;H01L21/363;H01L51/50 主分类号 H01L29/786
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