| 摘要 |
Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti (1-z) )O 3 [wherein 0.9 < x < 1.3, 0 ‰¤ y < 0.1, and 0 ‰¤ z < 0.9 are satisfied]with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): C n H 2n+1 COOH [wherein 3 ‰¤ n ‰¤ 7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium). |
