SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

An aspect of the present invention provides a semiconductor light emitting device for improving the luminous flux of light. The semiconductor light emitting device includes: a light emitting structure which includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a selective transmitting-reflecting layer which is arranged on the light emitting structure, has alternately arranged dielectric layers having different optical thicknesses, and has the sum of the optical thickness of a dielectric layer having the minimum optical thickness among the dielectric layers and the optical thickness of a dielectric layer having the maximum optical thickness among the dielectric layers between 0.75 and 0.80.