Preventing shorting of adjacent devices

摘要

Embodiments of the present invention provide a method of preventing electrical shorting of adjacent semiconductor devices. The method includes forming a plurality of fins of a plurality of field-effect-transistors on a substrate; forming at least one barrier structure between a first and a second fin of the plurality of fins; and growing an epitaxial film from the plurality of fins, the epitaxial film extending horizontally from sidewalls of at least the first and second fins and reaching the barrier structure situating between the first and second fins.