SENSOR AND MANUFACTURING METHOD THEREFOR

摘要

A sensor and its fabrication method are provided. The sensor comprises: a base substrate (32), a group of gate lines (30) and a group of data lines (31) arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines (30) and the group of data lines (31), each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line (42) disposed on the base substrate (32); a transparent electrode (41) disposed on the bias line (42) and being electrically contacted with the bias line (42); a photodiode (40) disposed on the transparent electrode (41); and a receiving electrode (39) disposed on the photodiode (40); the TFT device is located above the photodiode (40). When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate (32). In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.