发明名称 |
TANTALUM SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
摘要 |
A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less. By controlling the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed. |
申请公布号 |
EP2878699(A4) |
申请公布日期 |
2016.03.30 |
申请号 |
EP20130866236 |
申请日期 |
2013.12.06 |
申请人 |
JX NIPPON MINING & METALS CORP. |
发明人 |
SENDA, SHINICHIRO;NAGATSU, KOTARO |
分类号 |
C23C14/34;B21B1/22;C23C14/14;H01L21/285 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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