SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element for improving luminous efficiency includes a pit formation layer which has a pyramidal pit caused by a threading dislocation generated in a first semiconductor layer; an active layer; and an electron shielding layer which is formed on the active layer to cover a concave part. The active layer is formed on the pit formation layer and includes a filling part formed to fill the pit and the concave part which is formed on the surface of the filling part corresponding to the pit. The concave part of the active layer has a peak point formed in a position which exists in the lamination direction of the active layer in the active layer.