发明名称 IC STRUCTURE AND MANUFACTURING METHOD WITH THROUGH THICKNESS COAXIAL STRUCTURES
摘要 The present invention relates to a multi-layered electronic support structure, and a manufacturing method. The multi-layered electronic support structure comprises: a plurality of dielectric layers extended in an X-Y plane, and at least one coaxial pair of stack posts extended through at least one dielectric layer in a Z direction practically perpendicular to the X-Y plane. The coaxial pair of stack posts includes a central post surrounded by a toroidal post separated from the central post by a separation tube of a dielectric.
申请公布号 KR20160034871(A) 申请公布日期 2016.03.30
申请号 KR20160029460 申请日期 2016.03.11
申请人 ACCESS ADVANCED CHIP CARRIERS AND E-SUBSTRATE SOLUTIONS 发明人 DROR HURWITZ;SIMON CHAN;ALEX HUANG
分类号 H05K3/46;H01L23/498;H05K1/02 主分类号 H05K3/46
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