SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Disclosed is a semiconductor device. The device includes: a semiconductor substrate; a device separation film in a first trench defining a first conductive active area in the semiconductor substrate and surrounding the active area; a gate electrode traversing the active area and extended over the device separation film; and a gate insulation film between the active area and the gate electrode. The device separation film includes a first silicon oxide film on an inner wall of the first trench and a first metal oxide film on the first silicon oxide film.