发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 110-13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured. |
申请公布号 |
EP2497111(B1) |
申请公布日期 |
2016.03.30 |
申请号 |
EP20100828186 |
申请日期 |
2010.10.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
KOYAMA, JUN;YAMAZAKI, SHUNPEI |
分类号 |
H01L27/146;H01L27/12;H04N5/374;H04N5/3745 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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